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BLD135DH fiches techniques PDF

SI Semiconductors - TRANSISTORS

Numéro de référence BLD135DH
Description TRANSISTORS
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BLD135DH fiche technique
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
BLD NPN 系列晶体管/ BLD NPN SERIES TRANSISTORS
BLD135DH
特点: 耐压高 开关速度快 安全工作区宽 符合 RoHS 规范
■ ■ ■ ■FEATURESHIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA RoHS COMPLIANT
应用: 充电器 节能灯 电子镇流器
■ ■ ■APPLICATION: RECHARGER
FLUORESCENT LAMP
ELECTRONIC BALLAST
●最大额定值(Ta=25°C
Absolute Maximum RatingsTa=25°CTO-251/251S/252
参数
符号
额定值
单位
PARAMETER
SYMBOL VALUE UNIT
集电极-基极电压
Collector-Base Voltage
VCBO 850 V
集电极-发射极电压
Collector-Emitter Voltage
VCEO
450 V
集电极-发射极电压
Emitter- Base Voltage
VEBO 9.0 V
基极电流
Base Current
Ib 1.0 A
集电极电流
Collector Current
IC 4.0 A
集电极耗散功率
Total Power Dissipation
Ptot 1.3 W
最高工作温度
Junction Temperature
Tj 150 °C
贮存温度
Storage Temperature
Tstg
-65-150
°C
●电特性(Ta=25°C
Electronic CharacteristicsTa=25°C
参数名称
符号
测试条件
CHARACTERISTICS
集电极-基极截止电流
Collector-Base Cutoff Current
集电极-发射极截止电流
Collector-Emitter Cutoff Current
集电极-基极电压
Collector-Base Voltage
集电极-发射极电压
Collector-Emitter Voltage
发射极 -基极电压
Emitter- Base Voltage
SYMBOL
ICBO
ICEO
VCBO
VCEO
VEBO
TEST CONDITION
VCB=850V
VCE=450V,IB=0
IC=1mA,IE=0
IC=10mA,IB=0
IE=1mA,IC=0
集电极-发射极饱和电压
Collector-Emitter Saturation Voltage
发射极-基极饱和电压
Base-Emitter Saturation Voltage
Vcesat
Vbesat
IC=0.5A,IB=0.1A
IC=4.0A,IB=1.0A
IC=2.0A,IB=0.5A
最小值
MIN
850
450
9
最大值
MAX
100
250
0.5
1.5
1.6
单位
UNIT
μA
μA
V
V
V
V
V
V
电流放大倍数
DC Current Gain
VCE=5V,IC=10mA
7
hFE
VCE=5V,IC=1A
20 30
VCE=5V,IC=4.0A
5
贮存时间/Storage Time
ts
Vcc=5V,Ic=0.5A
2
4 μS
下降时间/Falling Time
tf (UI9600)
0.8 μS
内置二极管正向压降
Diode Forward Voltage
Vf If=2.0A
2.6 V
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
TO-251 251S 普通袋装/NORMAL PACKING
订货编码/ORDERING CODE
普通塑封料
无卤塑封料
Nornal Package Material
BLD135DH TO-251 251S
Halogen Free
BLD135DH TO-251 251S-HF
TO-251 251S 条管/TUBE
BLD135DH TO-251 251S-TU BLD135DH TO-251 251S-TU-HF
TO-252 普通袋装/NORMAL PACKING
BLD135DH TO-252
BLD135DH TO-252-HF
TO-252 盘式编带/TAPE&REEL
BLD135DH TO-252-TR
BLD135DH TO-252-TR-HF
Si semiconductors 2013.12
1

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