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ON Semiconductor - P-Channel Power MOSFET

Numéro de référence ATP104
Description P-Channel Power MOSFET
Fabricant ON Semiconductor 
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ATP104 fiche technique
Ordering number : ENA1406A
ATP104
P-Channel Power MOSFET
–30V, –75A, 8.4mΩ, Single ATPAK
http://onsemi.com
Features
Low ON-resistance
Slim package
Halogen free compliance
Large current
4.5V drive
Protection diode in
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW10μs)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note :*1 VDD=15V, L=100μH, IAV=38A
*2 L100μH, Single pulse
EAS
IAV
Conditions
PW10μs, duty cycle1%
Tc=25°C
Ratings
--30
±20
--75
--225
60
150
--55 to +150
130
38
Unit
V
V
A
A
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
6.5
4
1.5
0.4
ATP104-TL-H
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
ATP104
LOT No.
TL
2
1
0.8
3
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
Electrical Connection
4,2
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/20409PA MSIM TC-00001830 No. A1406-1/7

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