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PDF NGTB20N120IHRWG Data sheet ( Hoja de datos )
| Número de pieza | NGTB20N120IHRWG | |
| Descripción | IGBT | |
| Fabricantes | ON Semiconductor | |
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NGTB20N120IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, provides and
superior performance in demanding switching applications, and offers
low on−state voltage with minimal switching loss. The IGBT is well
suited for resonant or soft switching applications.
Features
• Extremely Efficient Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for Low Losses in IH Cooker Application
• Reliable and Cost Effective Single Die Solution
• These are Pb−Free Devices
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter voltage @ TJ = 25°C
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse
limited by TJmax, 10 ms Pulse, VGE =
15 V
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse limited
by TJmax, 10 ms Pulse, VGE = 0 V
Gate−emitter voltage
Transient Gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Operating junction temperature
range
Symbol
VCES
IC
ICM
IF
IFM
VGE
PD
TJ
Value
1200
40
20
120
40
20
120
$20
$25
384
192
−40 to +175
Unit
V
A
A
A
A
V
W
°C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +175
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
20 A, 1200 V
VCEsat = 2.10 V
Eoff = 0.45 mJ
C
G
E
G
C
E
TO−247
CASE 340AL
MARKING DIAGRAM
20N120IHR
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
NGTB20N120IHRWG TO−247
(Pb−Free)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 1
1
Publication Order Number:
NGTB20N120IHR/D
1 page  
NGTB20N120IHRWG
TYPICAL CHARACTERISTICS
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
5
10000
Eoff
1000
td(off)
tf
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 20 A
15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
100
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 20 A
10
5 15 25 35 45 55 65 75
Rg, GATE RESISTOR (W)
Figure 14. Switching Time vs. Rg
85
1.6
1.4
1.2 Eoff
1
0.8
0.6
IC = 20 A
0.4 VGE = 15 V
0.2
TJ = 150°C
Rg = 10 W
0
250 300 350 400 450 500 550 600 650 700 750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
1000
td(off)
tf
100
IC = 20 A
VGE = 15 V
TJ = 150°C
Rg = 10 W
10
275 325 375 425 475 525
575 625
675 725 775
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Switching Time vs. VCE
1000
100
10
dc operation
1 ms 100 ms
50 ms
1000
VGE = 15 V, TC = 125°C
100
1
Single Nonrepetitive
Pulse TC = 25°C
0.1 Curves must be derated
linearly with increase
0.01 in temperature
1 10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
10
1 1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
http://onsemi.com
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