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WNM2029 fiches techniques PDF

Will Semiconductor - N-Channel MOSFET

Numéro de référence WNM2029
Description N-Channel MOSFET
Fabricant Will Semiconductor 
Logo Will Semiconductor 





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WNM2029 fiche technique
WNM2029
Single N-Channel, 20V, 1.85A, Power MOSFET
VDS (V)
20
Rds(on) (ȍ)
0.072@ VGS=4.5V
0.088@ VGS=2.5V
0.115@ VGS=1.8V
ID (A)
1.8
1.5
1.0
WNM2029
Http//:www.willsemi.com
Descriptions
The WNM2029 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNM2029 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-323
Applications
SOT-323
D
3
12
GS
Pin configuration (Top view)
3
29*
12
29 = Device Code
* = Month (A~Z)
Marking
Order information
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Device
WNM2029-3/TR
Package
SOT-323
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 Jan, 2011 - Rev.1.0

PagesPages 6
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