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WNM2030 fiches techniques PDF

Will Semiconductor - N-Channel MOSFET

Numéro de référence WNM2030
Description N-Channel MOSFET
Fabricant Will Semiconductor 
Logo Will Semiconductor 





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WNM2030 fiche technique
WNM2030
WNM2030
Single N-Channel, 20V, 0.95A, Power MOSFET
Http://www.sh-willsemi.com
VDS (V)
20
Rds(on) (ȍ)
0.210@ VGS=4.5V
0.250@ VGS=2.5V
0.305@ VGS=1.8V
ESD Protected
Descriptions
The WNM2030 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM2030 is Pb-free.
SOT-723
D
3
12
GS
Pin configuration (Top view)
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-723
Applications
3
2*
1
2
2 = Device Code
* = Month (A~Z)
Marking
Order information
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Device
Package
Shipping
WNM2030-3/TR SOT-723 8000/Reel&Tape
Will Semiconductor Ltd. 1 Sep, 2014 - Rev.1.5

PagesPages 6
Télécharger [ WNM2030 ]


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