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PDF WNM2034 Data sheet ( Hoja de datos )
| Número de pieza | WNM2034 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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WNM2034
N-Channel, 20V, 3.6A, Power MOSFET
WNM2034
Http://www.willsemi.com
VDS (V)
20
Rdson (ȍ)
0.037 @ 10V
0.045 @ 4.5V
Descriptions
The WNM2034 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench technology
and design to provide excellent RDS (ON) with low gate
charge. This device is suitable for use in DC-DC
conversion and power switch applications. Standard
Product WNM2034 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
Applications
SOT-23
D
3
12
GS
Configuration (Top View)
W34*
W34
*
= Device Code
= Month (A~Z)
Marking
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
Order Information
Device
Package
WNM2034-3/TR SOT-23
Shipping
3000/Tape&Reel
Will Semiconductor Ltd.
1 Dec,2011 - Rev.1.2
1 page  
800
V =0,f=1MHZ
GS
600
C
iss
C
oss
C
rss
400
200
0
0 5 10 15 20
V Drain-to-Source Voltage (V)
DS
Capacitance
10
8
6
4
2
TA = 25 °C
0
0.01
0.1
1 10
Time (s)
100 1000
Single Pulse Power
3.0
250C
2.4 1500C
1.8
1.2
0.6
WNM2034
0.0 0.2 0.4 0.6 0.8 1.0
V -Source-to-Drain Voltage(V)
sd
Source to Drain Diode Forward Voltage
10
Limited by RDS(on)*
100 μs
1 ms
1
10 ms
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
100 ms
1s
10 s
100 s, DC
0.01
0.1
1 10
VDS - Drain-to-Source Voltage (V)
100
Safe Operating Area
15
V =10V,I =3.6A
DS D
12
9
6
3
0
0 5 10 15 20
Q ( nC)
g
Gate Charge Characteristics
Will Semiconductor Ltd.
5
Dec,2011 - Rev.1.2
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WNM2034.PDF ] | |
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