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Numéro de référence | WNM3008 | ||
Description | N-Channel MOSFET | ||
Fabricant | Will Semiconductor | ||
Logo | |||
WNM3008
Single N-Channel, 30V, 3.1A, Power MOSFET
VDS (V)
30
Rds(on) (ȍ)
0.044@ VGS=10V
0.057@ VGS=4.5V
WNM3008
Http//:www.willsemi.com
Descriptions
The WNM3008 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM3008 is Pb-free.
Features
SOT-23
D
3
12
GS
Pin configuration (Top view)
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
W38*
W38
*
= Device Code
= Month
Marking
Order information
Device
Package
Shipping
WNM3008-3/TR SOT-23 3000/Reel&Tape
Will Semiconductor Ltd. 1 Feb, 2012 - Rev.1.2
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Pages | Pages 7 | ||
Télécharger | [ WNM3008 ] |
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