DataSheetWiki


WNM3008 fiches techniques PDF

Will Semiconductor - N-Channel MOSFET

Numéro de référence WNM3008
Description N-Channel MOSFET
Fabricant Will Semiconductor 
Logo Will Semiconductor 





1 Page

No Preview Available !





WNM3008 fiche technique
WNM3008
Single N-Channel, 30V, 3.1A, Power MOSFET
VDS (V)
30
Rds(on) (ȍ)
0.044@ VGS=10V
0.057@ VGS=4.5V
WNM3008
Http//:www.willsemi.com
Descriptions
The WNM3008 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM3008 is Pb-free.
Features
SOT-23
D
3
12
GS
Pin configuration (Top view)
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
W38*
W38
*
= Device Code
= Month
Marking
Order information
Device
Package
Shipping
WNM3008-3/TR SOT-23 3000/Reel&Tape
Will Semiconductor Ltd. 1 Feb, 2012 - Rev.1.2

PagesPages 7
Télécharger [ WNM3008 ]


Fiche technique recommandé

No Description détaillée Fabricant
WNM3003 N-Channel MOSFET Will Semiconductor
Will Semiconductor
WNM3003 N-Channel MOSFET TY Semiconductor
TY Semiconductor
WNM3008 N-Channel MOSFET Will Semiconductor
Will Semiconductor
WNM3008 N-Channel MOSFET TY Semiconductor
TY Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche