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WNM3011 fiches techniques PDF

Will Semiconductor - N-Channel MOSFET

Numéro de référence WNM3011
Description N-Channel MOSFET
Fabricant Will Semiconductor 
Logo Will Semiconductor 





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WNM3011 fiche technique
WNM3011
N-Channel, 30V, 5.7A, Power MOSFET
WNM3011
Http://www.willsemi.com
V(BR)DSS
30V
Rds(on)
(Ÿ)
0.028@ 10V
0.039@ 4.5V
Descriptions
The WNM3011 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench technology
and design to provide excellent RDS (ON) with low gate
charge. This device is suitable for use in DC-DC
conversion and power switch applications. Standard
Product WNM3011 is Pb-free.
SOT-23-6L
DDS
65 4
123
DDG
Configuration (Top View)
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23-6L
Applications
6 54
3011
YYWW
1 23
3011
YY
WW
= Device Code
=Year
=Week
Marking
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Order Information
Device
Package
WNM3011-6/TR SOT-23-6L
Shipping
3000/Tape&Reel
Will Semiconductor Ltd. 1 Dec, 2011 - Rev.1.0

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