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WNM4006 fiches techniques PDF

Will Semiconductor - N-Channel MOSFET

Numéro de référence WNM4006
Description N-Channel MOSFET
Fabricant Will Semiconductor 
Logo Will Semiconductor 





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WNM4006 fiche technique
WNM4006
Single N-Channel, 45V, 1.7A, Power MOSFET
VDS (V)
45
Rds(on) (ȍ)
0.126@ VGS=10V
0.142@ VGS=4.5V
0.147@ VGS=4.0V
0.208@ VGS=2.5V
Descriptions
The WNM4006 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM4006 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
WNM4006
Http//:www.willsemi.com
SOT-23
D
3
12
GS
Pin configuration (Top view)
W46*
W46
*
= Device Code
= Month (A~Z)
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Marking
Order information
Device
Package
Shipping
WNM4006-3/TR SOT-23 3000/Reel&Tape
Will Semiconductor Ltd. 1 Feb, 2012 - Rev.1.0

PagesPages 7
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