|
|
Numéro de référence | WNMD2160 | ||
Description | Dual N-Channel MOSFET | ||
Fabricant | Will Semiconductor | ||
Logo | |||
WNMD2160
Dual N-Channel, 20V, 6.3A, Power MOSFET
VDS (V)
Rds(on) (ȍ)
0.0157@ VGS=4.5V
0.018@ VGS=3.1V
20
0.020@ VGS=2.5V
ESD Rating: 2000V HBM
WNMD2160
Http//:www.willsemi.com
Descriptions
The WNMD2160 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2160 is Pb-free.
Features
SOT-23-6L
G1 D1/D2 G2
654
1 23
S1 D1/D2 S2
Pin configuration (Top view)
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23-6L
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
6 54
2160
YYWW
1 23
2160
YY
WW
= Device Code
= Year
= Week
Marking
Order information
Device
Package
Shipping
WNMD2160-6/TR SOT-23-6L 3000/Reel&Tape
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.4
|
|||
Pages | Pages 7 | ||
Télécharger | [ WNMD2160 ] |
No | Description détaillée | Fabricant |
WNMD2160 | Dual N-Channel MOSFET | Will Semiconductor |
WNMD2162 | Dual N-Channel MOSFET | Will Semiconductor |
WNMD2162A | Dual N-Channel MOSFET | Will Semiconductor |
WNMD2165 | Dual N-Channel MOSFET | Will Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |