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WNMD2167 fiches techniques PDF

Will Semiconductor - Dual N-Channel MOSFET

Numéro de référence WNMD2167
Description Dual N-Channel MOSFET
Fabricant Will Semiconductor 
Logo Will Semiconductor 





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WNMD2167 fiche technique
WNMD2167
Dual N-Channel, 20V, 6.3A, Power MOSFET
VDS (V)
20
Typical Rds(on) (Ω)
0.016@ VGS=4.5V
0.018@ VGS=3.1V
0.020@ VGS=2.5V
Descriptions
The WNMD2167 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2167 is Pb-free.
WNMD2167
Http//:www.willsemi.com
SOT-23-6L
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-23-6L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Pin configuration (Top view)
6 54
2167
YYWW
1 23
2167 =
YY =
WW =
Device Code
Year
Week
Marking
Order information
Device
Package
Shipping
WNMD2167-6/TR SOT-23-6L 3000/Reel&Tape
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.2

PagesPages 7
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