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WNMD2172 fiches techniques PDF

Will Semiconductor - Dual N-Channel MOSFET

Numéro de référence WNMD2172
Description Dual N-Channel MOSFET
Fabricant Will Semiconductor 
Logo Will Semiconductor 





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WNMD2172 fiche technique
WNMD2172
Dual N-Channel, 20V, 7.0A, Power MOSFET
VDS (V)
20
ESD Protected
Descriptions
Rds(on) (Ω)
0.015@ VGS=4.5V
0.0155@ VGS=4.0V
0.017@ VGS=3.1V
0.018@ VGS=2.5V
0.021@ VGS=1.8V
The WNMD2172 is Dual N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2172 is Pb-free and
Halogen-free.
Features
WNMD2172
Http//:www.sh-willsemi.com
TSSOP-8L
D1/D2 S2 S2 G2
8 76 5
12 34
D1/D2 S1 S1 G1
Pin configuration (Top view)
87 65
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package TSSOP-8L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
WLS I
2 1 72
WDYW
12 3 4
WLSI
2172
WD
= Willsemi
= Device Code
= Special Code
Y = Year
W = Week
Marking
Order information
Device
WNMD2172-8/TR
Package
TSSOP-8L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.1

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