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PDF WPM1483 Data sheet ( Hoja de datos )
| Número de pieza | WPM1483 | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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WPM1483
Single P-Channel, -12V, -3.5A, Power MOSFET
VDS (V)
-12
Typical Rds(on) (Ω)
0.031@ VGS=–4.5V
0.040@ VGS=–2.5V
0.056@ VGS=–1.8V
Descriptions
The WPM1483 is P-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit . Standard Product WPM1483 is Pb-free
and Halogen-free.
Features
WPM1483
Http//:www.sh-willsemi.com
SOT-23
Pin configuration (Top view)
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-23
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
W83
W=Willsemi
83= Device Code
*= Month (A~Z)
Marking
Order information
Device
Package
Shipping
WPM1483 -3/TR SOT-23 3000/Reel&Tape
Will Semiconductor Ltd. 1 Aug, 2013 - Rev.1.0
1 page  
WPM1483
1800
1600
1400
1200
1000
800
600
400
200
0
50
40
ciss
coss
crss
2468
-V - Drain to Source Voltage(V)
DS
Capacitance
10
TJ(Max） =150°C
TA=25°C
30
20
10
0
1E-3
0.01
0.1 1
10
Pulse width (S)
100 1000
Single pulse power
10
T=25°C
8 T=125°C
6
4
2
0.0
100
0.2 0.4 0.6 0.8 1.0
-V - Source to Drain Voltage (V)
SD
Body diode forward voltage
1.2
Limit by R
10 dson
100us
1ms
1
10ms
0.1
TA=25°C
Single Pulse
DC 100ms
1s
10s
Bvdss Limit
0.01
0.1
1 10
-VDS- Drain Source Voltage (V)
* V > minimum V at which R is specified
GS GS DS(on)
Safe operating power
100
5
VGS=-4.5V
4 VDS=-10V
ID=-3.5A
3
2
1
0
0 4 8 12 16
Qg(nC)
Gate charge Characteristics
Will Semiconductor Ltd.
5
Aug, 2013 - Rev.1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WPM1483.PDF ] | |
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