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PDF WCM2079 Data sheet ( Hoja de datos )

Número de pieza WCM2079
Descripción MOSFET ( Transistor )
Fabricantes WillSEMI 
Logotipo WillSEMI Logotipo



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No Preview Available ! WCM2079 Hoja de datos, Descripción, Manual

WCM2079
N- and P-Channel Complementary, 20V,MOSFET
VDS (V)
Typical RDS(on) ()
N-Channel
20
P-Channel
-20
0.020@VGS=10V
0.023@VGS=4.5V
0.028@VGS=-10V
0.035@VGS=-4.5V
Descriptions
The WCM2079 is the N-Channel and P-Channel
enhancement MOS Field Effect Transistor as a
single package for DC-DC converter or level shift
applications, uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. Standard Product WCM2079 is Pb-free and
Halogen-free.
WCM2079
http://www.sh-willsemi.com
(4)
(3)
(2)
(1)
SOP-8L
Pin configuration (Top View)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Package SOP-8L
Applications
Driver: Relays, Solenoids, Lamps, Hammers
Power supply converters circuit
Load/Power Switching for portable device
2079 = Device Code
NP = Special Code
YW = Date Code
Marking
Order Information
Device
Package
Shipping
WCM2079-8/TR SOP-8L 2500/Tape&Reel
Will Semiconductor Ltd.
1
2016/5/20 - Rev.1.0

1 page




WCM2079 pdf
800
700
600 Ciss
500
400
300
200 Coss
100
Crss
0
0 2 4 6 8 10 12 14
VDS-Drain to Source Voltage (V)
Capacitance
50
40
30
20
10
0
10-3
10-2
10-1
1
10
Time(s)
Single pulse power
100 600
WCM2079
10
8
T=25oC
6
T=150oC
4
T=-50oC
2
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD-Source to Drain Voltage (V)
Body Diode Forward Voltage
100
Limited by RDS(on)
10 100uS
1mS
1 10mS
100mS
0.1
TA=25
Single Puluse
BVDSS Limit
1S
10S
DC
0.01
0.1
1 10
VDS-Drain-to-Source Voltage(V)
100
Safe operating power
Will Semiconductor Ltd.
5
2016/5/20 - Rev.1.0

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