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WCR380N65TH fiches techniques PDF

WillSEMI - MOSFET ( Transistor )

Numéro de référence WCR380N65TH
Description MOSFET ( Transistor )
Fabricant WillSEMI 
Logo WillSEMI 





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WCR380N65TH fiche technique
WCR380N65T/WCR380N65TF/ WCR380N65TH
650V N-Channel Super Junction MOSFET
WCR380N65T series
Description
Features
The WCR380N65T series is new generation of high
voltage MOSFET family that is utilizing an advanced
charge balance mechanism for outstanding low
on-resistance and lower gate charge performance. This
advanced technology has been tailored to minimize
conduction loss, provide superior switching performance,
and withstand extreme dv/dt rate and higher avalanche
energy. This device is suitable for various AC/DC power
conversion in switching mode operation for higher
efficiency.
700V@TJ=150°C
Typ.RDS(on)=0.33
Low gate charge(typ. Qg= 32nC)
100% avalanche tested
100% Rg tested
Order Information
Device
Package
Marking
Units/Tube Units/Real
WCR380N65T-3/T
TO-220
WCR380N65TYYWW
50
WCR380N65TF-3/T TO-220F WCR380N65TFYYWW
50
WCR380N65TH-3/TR TO-263E-2 WCR380N65THYW
800
Note 1: WCR380N65T=Device code ; YY=Year ;WW=Week (A~z);
Note 2: WCR380N65TF=Device code ; YY=Year ;WW=Week (A~z);
Note 3: WCR380N65TH=Device code ; Y=Year ;W=Week (A~z);
Absolution Maximum Ratings TA=25 oC unless otherwise noted
Parameter
Symbol
WCR380N65T
WCR380N65TH
TO-220
TO-220F
WCR380N65TF
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
650
±30
Continuous Drain Current A TC=25°C
TC=100°C
Pulsed Drain Current B
Single Pulsed Avalanche Energy C
Avalanche Current B
Repetitive Avalanche Energy B
ID
IDM
EAS
IAR
EAR
10.6
6.7
30
215
2.7
0.30
Power Dissipation
TC=25°C
Derate above 25°C
PD
83
0.66
31.2
0.25
Operating and Storage Temperature Range TJ,TSTG
-55~150
Lead Temperature
TL 260
Thermal Resistance Ratings
Maximum Junction-to-Ambient
RθJA
60
80
Maximum Junction-to-Case
RθJC
1.5
4
TO-263E-2
Unit
V
A
A
mJ
A
mJ
W
W/°C
°C
°C
°C/W
Will Semiconductor Ltd.
1 Nov, 2016 - Rev.1.1

PagesPages 9
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