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Número de pieza | WNM2077 | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | WillSEMI | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de WNM2077 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! WNM2077
WNM2077
Single N-Channel, 20V, 0.54A, Power MOSFET
VDS (V)
20
Rds(on) (Ω)
0.420@ VGS=4.5V
0.580@ VGS=2.5V
0.840@ VGS=1.8V
ESD Protected
Descriptions
The WNM2077 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM2077 is Pb-free.
Features
● Trench Technology
● Supper high density cell design
● Excellent ON resistance for higher DC current
● Extremely Low Threshold Voltage
● Small package SOT-723
Applications
● Driver for Relay, Solenoid, Motor, LED etc.
● DC-DC converter circuit
● Power Switch
● Load Switch
● Charging
Will Semiconductor Ltd.
1
Http//:www.willsemi.com
SOT-723
D
3
12
GS
Pin configuration (Top view)
NB = Device Code
* = Month (A~Z)
Marking
Order information
Device
WNM2077-3/TR
Package
SOT-723
Shipping
8000/Reel&Tape
Sep, 2015 - Rev.1.0
1 page WNM2077
60 0.8
VGS=0V
50 F=1MHz
0.6
40
T=150oC
30 0.4
Ciss
20 Coss
T=25oC
Crss
0.2
10
0 0.0
2 4 6 8 10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VDS-Drain Voltage (V)
VSD-Source-to-Drain Voltage (V)
Capacitance
Body Diode Forward Voltage
4 V =4.5V, V =10V, I =0.54A
GS DS D
3
2
1
0
0.0 0.4 0.8 1.2
Qg (nc)
Gate Charge Characteristics
1
0.1
0.01
1E-3
0.1
Limited by R
DS(on)
TA=25oC
Single Pulse
1ms
10ms
100ms
1s
10s
DC
1 10
VDS-Drain-to-Source Voltage (V)
Safe Operating Power
100
Transient Thermal Response (Junction-to-Ambient)
Will Semiconductor Ltd.
5
Sep, 2015 - Rev.1.0
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet WNM2077.PDF ] |
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