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PDF WNM3019 Data sheet ( Hoja de datos )
| Número de pieza | WNM3019 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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WNM3019
Small Signal N-Channel, 30V, 0.2A, MOSFET
VDS (V) Typical Rds(on) (Ω)
1.2@ VGS=10V
30 1.4@ VGS=4.5V
1.9@ VGS=2.5V
ESD Rating: 2000V HBM
Descriptions
The WNM3019 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in small signal switch. Standard Product WNM3019
is Pb-free and Halogen-free.
WNM3019
Http://www.sh-willsemi.com
Pin configuration (Top view)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
HBM ESD protection >2 kV
Small package SOT-523
Applications
Driver: Relay, Solenoid, Lamps,Hammers etc.
Power supply converters circuit
Load/Power Switching for potable device
19 = Device Code
* = Month (A~Z)
Marking
Order information
Device
WMN3019-3/TR
Package
Shipping
SOT-523 3000/Reel&Tape
Will Semiconductor Ltd.
1 2015/8/10 – Rev. 1.0
1 page  
50
45
f=1MHZ
V =0V
GS
40 Ciss
35
30
25 Coss
20
15 Crss
10
0 5 10 15 20
V -Drain to Source Voltage (V)
DS
Capacitance
100
TJ(Max)=150C
TA=25C
10
1
0.1
1E-4
1E-3
0.01
0.1
1
Pulse width (S)
10 100
Single pulse power
WNM3019
1.0
-55OC
25OC
0.8 150OC
0.6
0.4
0.2
0.0
0.0
0.2 0.4 0.6 0.8 1.0
V - Source to Drain Voltage(V)
SD
1.2
Body diode forward voltage
1
0.1
0.01
1E-3
0.1
10ms
100ms
DC 1s
10s
T =250C
A
Single Pulse
Bvdss Limit
1 10
VDS- Drain Source Voltage (V)
Safe operating power
10
8
6
4
2
0
0.0
V = 30V
DS
ID =0.1A
0.5 Qg1(.n0C)
1.5
2.0
Gate charge Characteristics
Will Semiconductor Ltd.
5 2015/8/10 – Rev. 1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WNM3019.PDF ] | |
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