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PDF WPM2081 Data sheet ( Hoja de datos )
| Número de pieza | WPM2081 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
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Hay una vista previa y un enlace de descarga de WPM2081 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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WPM2081
Single P-Channel, -20V, -3.2A, Power MOSFET
WPM2081
Http://www.sh-willsemi.com
VDS (V)
-20
Typical RDS(on) (mΩ)
43 @ VGS=-4.5V
55 @ VGS=-2.5V
Descriptions
The WPM2081 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM2081 is Pb-free.
Features
D
S
G
SOT-23
D
3
12
GS
Pin configuration (Top view)
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
PB = Device Code
Y = Year
W = Week(A~z)
Marking
Order information
Device
WPM2081-3/TR
Package
SOT-23
Shipping
3000/Tape&Reel
Will Semiconductor Ltd. 1 2016/06/03- Rev.1.0
1 page  
WPM2081
1200
1000
800
600
400
200
0
F=1MHz
Ciss
Crss
Coss
2468
-VDS-Drain to Source Voltage (V)
Capacitance
10
10
9
8
7
6
5
4
T=150oC
T=25oC
3
2
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD-Source to Drain Voltage (V)
Body diode forward voltage
120 100
100 TJ(MAX)=150oC
TA=25oC
80
60
40
20
0
1E-4
1E-3
0.01
0.1
1
10
Pulse width (S)
100 1000
10 Limit by Rdson
100us
1
10s
0.1
T =25oC
A
Single Pulse
1ms
10ms
100ms
DC 1s
BVDSS Limit
0.1 1 10
-V -Drain to Source Voltage(V)
DS
*V >minimum V at which R is specified
GS GS DS(ON)
100
Single pulse power
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
VDS=-10V
I =-3.3A
D
Safe operating power
2468
Qg(nC)
Gate Charge Characteristics
10
Will Semiconductor Ltd. 5 2016/06/03- Rev.1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WPM2081.PDF ] | |
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