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Número de pieza | WPM3023 | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | WillSEMI | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de WPM3023 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! WPM3023
Single P-Channel, -30V, -3.9A, Power MOSFET
VDS (V)
-30
Typical RDS(on) (mΩ)
37 @ VGS=-10V
50 @ VGS=-4.5V
WPM3023
Http://www.sh-willsemi.com
Descriptions
The WPM3023 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM3023 is Pb-free.
Features
SOT-23
D
3
12
GS
Pin configuration (Top view)
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
PF = Device Code
Y = Year
W = Week(A~z)
Marking
Order information
Device
WPM3023-3/TR
Package
SOT-23
Shipping
3000/Tape&Reel
Will Semiconductor Ltd. 1 July.2016- Rev.1.0
1 page WPM3023
1200
1000
800
600
400
200
0
0
Ciss
F = 1MHZ
Coss
Crss
3 6 9 12
-V -Drain to Source Voltage (V)
DS
Capacitance
15
10
8
6
T=150oC
4
2
T=25oC
0.0 0.2 0.4 0.6 0.8 1.0
-V -Source to Drain Voltage (V)
SD
Body diode forward voltage
1.2
100
TJ(MAX)=150oC
80 TA=25oC
60
40
20
0
1E-4
1E-3
0.01
0.1
1
Pulse width (S)
10
Single pulse power
100
100
Limit by Rdson
10
1
10s
100us
1ms
10ms
0.1
TA=25oC
Single Pulse
DC
100ms
1s
0.01
0.1
1 10
-V -Drain to Source Voltage(V)
DS
*V >minimum V at which R is specified
GS GS DS(ON)
Safe operating power
100
10
V =-10V
DS
8 I =-5A
D
6
4
2
0
0 3 6 9 12
Q (nC)
g
Gate Charge Characteristics
15
Will Semiconductor Ltd. 5 July.2016- Rev.1.0
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet WPM3023.PDF ] |
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