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QM04N60F fiches techniques PDF

UBIQ - MOSFETs

Numéro de référence QM04N60F
Description MOSFETs
Fabricant UBIQ 
Logo UBIQ 





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QM04N60F fiche technique
QM04N60F
機密
1
2011-11-15 - 1 -
N-Ch 600V Fast Switching MOSFETs
General Description
The QM04N60F is the highest performance N-ch
MOSFETs with extreme high cell density , which
provide excellent RDSON and gate charge for
most of the synchronous buck converter
applications .
The QM04N60F meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
Features
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
600V
RDSON
2.0
ID
4A
Applications
z High efficient switched mode power supplies
z Electronic lamp ballast
z LCD TV/ Monitor
z Adapter
TO220F Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
S
GD
Rating
600
±30
4
2.6
8
19.3
6
41.6
-55 to 150
-55 to 150
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient (Steady State)1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
62
3
Units
V
V
A
A
A
mJ
A
W
Unit
/W
/W
Rev A.01 D110311
1

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