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PDF QM04N65F1 Data sheet ( Hoja de datos )
| Número de pieza | QM04N65F1 | |
| Descripción | MOSFETs | |
| Fabricantes | UBIQ | |
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QM04N65F1
機密
第1頁
2011-11-25 - 1 -
N-Ch 650V Fast Switching MOSFETs
General Description
The QM04N65F1 is the highest performance
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM04N65F1 meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
Features
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
650V
RDSON
2.6 Ω
ID
4A
Applications
z High efficient switched mode power supplies
z Electronic lamp ballast
z LCD TV/ Monitor
z Adapter
TO220FL Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
EAS
IAS
PD@TC=25℃
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
S
GD
Rating
650
±30
4
2.6
8
26.2
7
41.6
-55 to 150
-55 to 150
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient (Steady State)1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
62
3
Units
V
V
A
A
A
mJ
A
W
℃
℃
Unit
℃/W
℃/W
Rev A.01 D100611
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet QM04N65F1.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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