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MCC - NPN Plastic Medium-Power Silicon Transistors

Numéro de référence TIP100
Description NPN Plastic Medium-Power Silicon Transistors
Fabricant MCC 
Logo MCC 





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TIP100 fiche technique
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
Features
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
High DC Current Gain : hFE=2500 (Typ) @ IC=4.0Adc
Low Collector-Emitter Saturation Voltage
Monolithic Construction with Built-in Base-Emitter Shunt Resistors
TO-220 Compact package
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Maximum Ratings
Symbol
Parameter
Rating
Unit
VCEO
Collector-Emitter Voltage
TIP100
TIP101
TIP102
60
80
100
V
VCBO
Collector-Base Voltage
TIP100
TIP101
60
80
V
TIP102
100
VEBO
Emitter-Base Voltage
5.0 V
IC Collector Current-continuous
ICP Collector Current-peak
IB Base Current
PD
Collector Dissipation @TC=25OC
Derate above 25 OC
TJ, Junction Temperature
TSTG
Storage Temperature
8.0
15
1.0
80
0.64
-55 to +150
-55 to +150
A
A
A
W
W/ OC
OC
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
VCEO(SUS)
Collector-Emitter Sustaining Voltage
(IC=30mAdc, IB=0)
TIP100
TIP101
TIP101
ICEO Collector Cut-off Current
(VCE=30Vdc, IB=0)
(VCE=40Vdc, IB=0)
(VCE=50Vdc, IB=0)
ICBO Collector Cut-off Current
(VCB=60Vdc, IE=0)
(VCB=80Vdc, IE=0)
(VCB=100Vdc, IE=0)
IEBO Emitter Cut-off Current
(VBE=5.0Vdc, IC=0)
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
ON CHARACTERISTICS(1)
60
80
100
---
---
---
---
---
---
---
---
--- Vdc
---
50
50
uAdc
50
50
50
uAdc
50
8.0 mAdc
hFE(1)
DC Current Gain
(IC=3.0Adc, VCE=4.0Vdc)
(IC=8.0Adc, VCE=4.0Vdc)
VCE(sat) Collector-Emitter Saturation Voltage
(IC=3.0Adc, IB=6.0mAdc)
(IC=8.0Adc, IB=80mAdc)
VBE(ON)
Base-Emitter On Voltage
(IC=8.0Adc,VCE=4.0Adc)
hfe Small-Signal Current Gain
(IC=3.0Adc,VCE=4.0Vdc,f=1.0MHz)
Cob Output Capacitance
(VCB=10V, IE=0, f=0.1MHz)
(1) Pulse Test: Pulse Width<300us, Duty Cycle<2%
1000
200
---
---
---
4.0
---
20000
---
2.0
2.5
2.8
---
200
----
Vdc
Vdc
---
pF
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
TIP100
TIP101
TIP102
NPN Plastic
Medium-Power
Silicon Transistors
TO-220
B
F
C
S
Q
A
12 3
H
T
U
K
V
L
D
G
N
J
R
PIN 1.
PIN 2.
PIN 3.
BASE
COLLECTOR
EMITTER
DIMENSIONS
INCHES
MM
DIM MIN MAX
MIN
MAX
NOTE
A .560 .625 14.22 15.88
B .380 .420 9.65 10.67
C .140 .190 3.56
4.82
D .020 .045 0.51
1.14
F
.139 .161
3.53
4.09
G .190 .110 2.29
2.79
H --- .250 --- 6.35
J
.012 .025
0.30
0.64
K .500 .580 12.70 14.73
L
.045 .060
1.14
1.52
N .190 .210 4.83
5.33
Q .100 .135 2.54
3.43
R .080 .115 2.04
S
.045 .055
1.14
2.92
1.39
T
.230 .270
5.84
6.86
U ----- .050 -----
V .045 ----- 1.15
1.27
-----
Revision: A
www.mccsemi.com
1 of 4
2011/01/01

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