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MJE3055T fiches techniques PDF

SavantIC - Silicon NPN Power Transistors

Numéro de référence MJE3055T
Description Silicon NPN Power Transistors
Fabricant SavantIC 
Logo SavantIC 





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MJE3055T fiche technique
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE3055T
DESCRIPTION
·With TO-220 package
·Complement to type MJE2955T
·DC current gain -hFE = 20–70 @ IC = 4 Adc
·Collector–emitter saturation voltage -
VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
APPLICATIONS
·Designed for general–purpose
switching and amplifier applications.
PINNING
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
70
60
5
10
6
75
150
-55~150
UNIT
V
V
V
A
A
W
VALUE
1.67
UNIT
/W

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