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MBM29F080A-70 fiches techniques PDF

Fujitsu - 8M (1M x 8) BIT FLASH MEMORY

Numéro de référence MBM29F080A-70
Description 8M (1M x 8) BIT FLASH MEMORY
Fabricant Fujitsu 
Logo Fujitsu 





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MBM29F080A-70 fiche technique
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
8M (1M × 8) BIT
DS05-20850-2E
MBM29F080A-55/-70/-90
s FEATURES
www.DataSheet4U.com
Single 5.0 V read, write, and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Pinout and software compatible with single-power supply Flash
Superior inadvertent write protection
48-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type)
40-pin TSOP(I) (Package Suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type)
44-pin SOP (Package Suffix: PF)
Minimum 100,000 write/erase cycles
High performance
55 ns maximum access time
Sector erase architecture
Uniform sectors of 64 K bytes each
Any combination of sectors can be erased. Also supports full chip erase.
Embedded Erase™ Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program™ Algorithms
Automatically programs and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Low VCC write inhibit 3.2 V
Hardware RESET pin
Resets internal state machine to the read mode
Erase Suspend/Resume
Supports reading or programming data to a sector not being erased
Sector group protection
Hardware method that disables any combination of sector groups from write or erase operation (a sector group
consists of 2 adjacent sectors of 64 K bytes each)
Temporary sector groups unprotection
Temporary sector unprotection via the RESET pin
Embedded Erase™, Embedded Program™ and ExpressFlash™ are trademarks of Advanced Micro Devices, Inc.

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