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PDF MBM29LV017-90 Data sheet ( Hoja de datos )

Número de pieza MBM29LV017-90
Descripción 16M (2M x 8) BIT FLASH MEMORY
Fabricantes Fujitsu 
Logotipo Fujitsu Logotipo



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FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
16M (2M × 8) BIT
DS05-20857-4E
MBM29LV017-80/-90/-12
s FEATURES
• Address specification is not necessary during command sequence
• Single 3.0 V read, program and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard commands
Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts
40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type)
48-ball FBGA (Package suffix: PBT)
• Minimum 100,000 program/erase cycles
• High performance
80 ns maximum access time
• Sector erase architecture
Uniform sectors of 64K bytes each
Any combination of sectors can be concurrently erased. Also supports full chip erase
• Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded programTM Algorithms
Automatically programs and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switches themselves to low power mode
• Low VCC write inhibit 2.5 V
• Hardware RESET pin
Resets internal state machine to the read mode
• Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector protection
Hardware method disables any combination of sectors from program or erase operations
• Sector Protection set function by Extended sector protect command
• Temporary sector unprotection
Temporary sector unprotection via the RESET pin
• In accordance with CFI (Common Flash Memory Interface)
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.

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MBM29LV017-90 pdf
s PRODUCT LINE UP
Part No.
Ordering Part No.
VCC
=
3.3
V
+0.3 V
–0.3 V
VCC
=
3.0
V
+0.6 V
–0.3 V
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
s BLOCK DIAGRAM
MBM29LV017-80/-90/-12
MBM29LV017
-80 —
— -90 -12
80 90 120
80 90 120
30 35 50
VCC
VSS
WE
RESET
CE
OE
RY/BY
Buffer
RY/BY
Erase Voltage
Generator
DQ0 to DQ7
Input/Output
Buffers
State
Control
Command
Register
Program Voltage
Generator
Chip Enable
Output Enable
Logic
STB Data Latch
A0 to A20
STB Y-Decoder
Low VCC Detector
Timer for
Program/Erase
Address
Latch
X-Decoder
Y-Gating
Cell Matrix
5

5 Page





MBM29LV017-90 arduino
MBM29LV017-80/-90/-12
The manufacturer and device codes may also be read via the command register, for instances when the
MBM29LV017 is erased or programmed in a system without access to high voltage on the A9 pin. The command
sequence is illustrated in Table 6. (Refer to Autoselect Command section.)
Byte 0 (A0 = VIL) represents the manufacture’s code (Fujitsu = 04H) and byte 1 (A0 = VIH) represents the device
identifier code MBM29LV017 = C8H. All identifiers for manufactures and device will exhibit odd parity with DQ7
defined as the parity bit. In order to read the proper device codes when executing the autoselect, A1 must be
VIL. (See Tables 3.1 and 3.2.)
In order to determine which sectors are write protected, A1 must be at VIH while running through the sector
addresses; if the selected sector is protected, a logical ‘1’ will be output on DQ0 (DQ0 = 1).
Table 3.1 MBM29LV017 Sector Protection Verify Autoselect Code
Type
A16 to A20
A10
A6
A1
A0
Manufacture’s Code
X VIL VIL VIL VIL
Device Code MBM29LV017 X VIL VIL VIL VIH
Sector Protection
Sector
Addresses
VIL
VIL
VIH
VIL
Code (HEX)
04H
C8H
01H*1
*1: Outputs 01H at protected sector addresses and outputs 00H at unprotected sector addresses.
Table 3.2 Expanded Autoselect Code Table
Type
Code DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0
Manufacture’s Code
04H 0 0 0 0 0 1 0 0
Device Code MBM29LV017
C8H 1
1
0
0
1
0
0
0
Sector Protection
01H 0 0 0 0 0 0 0 1
11

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