|
|
PDF 2N5401 Data sheet ( Hoja de datos )
| Número de pieza | 2N5401 | |
| Descripción | PNP SILICON PLANAR EPITAXIAL TRANSISTOR | |
| Fabricantes | CDIL | |
| Logotipo |  |
|
 1. PNP, (-)150V, (-) 600mA, TO-92  Hay una vista previa y un enlace de descarga de 2N5401 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR
2N5401
TO-92
CBE
EBC
High Voltage PNP Transistor For General Purpose And Telephony Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
SYMBOL
VALUE
Collector -Emitter Voltage
VCEO
150
Collector -Base Voltage
VCBO
160
Emitter -Base Voltage
VEBO
5.0
Collector Current Continuous
IC
600
Power Dissipation @Ta=25 degC
PD
625
Derate Above 25 deg C
5.0
Power Dissipation @Tc=25 degC
PD
1.5
Derate Above 25 deg C
12
Operating And Storage Junction
Tj, Tstg
-55 to +150
Temperature Range
THERMAL RESISTANCE
Junction to Case
Rth(j-c)
83.3
Junction to Ambient
Rth(j-a)
200
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector -Emitter Voltage
VCEO* IC=1mA,IB=0
150
Collector -Base Voltage
VCBO IC=100uA.IE=0
160
Emitter -Base Voltage
VEBO
IE=10uA, IC=-0
5.0
Collector-Cut off Current
ICBO
VCB=160V, IE=0
-
TYP
-
-
-
-
UNIT
V
V
V
mA
mW
mw/deg C
W
mw/deg C
deg C
deg C/W
deg C/W
MAX
-
-
-
50
UNIT
V
V
V
nA
Emitter-Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Ta=100 deg C
VCB=160V, IE=0
IEBO
VEB=4V, IC=0
hFE*
IC=1mA,VCE=5V
IC=10mA,VCE=5V
IC=50mA,VCE=5V
VCE(Sat)* IC=10mA,IB=1mA
IC=50mA,IB=5mA
VBE(Sat) * IC=10mA,IB=1mA
IC=50mA,IB=5mA
-
-
50
60
50
-
-
-
-
- 50 uA
- 50 nA
--
- 240
--
- 0.2 V
- 0.5 V
- 1.0 V
- 1.0 V
Continental Device India Limited
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N5401.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2N540 | Trans GP BJT NPN 80V 7A 3-Pin(2+Tab) TO-66 Sleeve |  New Jersey Semiconductor |
| 2N5400 | Amplifier Transistor |  ON Semiconductor |
| 2N5400 | PNP EPITAXIAL SILICON TRANSISTOR |  Samsung semiconductor |
| 2N5400 | PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |  Semtech Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |