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Numéro de référence | 2N6519 | ||
Description | High Voltage Transistors | ||
Fabricant | Motorola Semiconductors | ||
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1 Page
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6515/D
High Voltage Transistors
COLLECTOR
3
COLLECTOR
3
2
BASE
NPN
1
EMITTER
2
BASE
PNP
1
EMITTER
NPN
2N6515
2N6517
PNP
2N6519
2N6520
MAXIMUM RATINGS
Rating
2N6517
Symbol 2N6515 2N6519 2N6520
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
2N6515, 2N6516, 2N6517
2N6519, 2N6520
VCEO
250
300
350
VCBO
250
300
350
VEBO
6.0
5.0
Base Current
Collector Current — Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
IB
IC
PD
250
500
625
5.0
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5
12
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
2N6515
2N6519
2N6517, 2N6520
Collector – Base Breakdown Voltage
(IC = 100 µAdc, IE = 0 )
2N6515
2N6519
2N6517, 2N6520
Emitter – Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
2N6515, 2N6517
2N6519, 2N6520
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Voltage and current are negative
for PNP transistors
1
23
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Unit
°C/W
°C/W
Symbol
Min
Max
Unit
V(BR)CEO
Vdc
250 —
300 —
350 —
V(BR)CBO
Vdc
250 —
300 —
350 —
V(BR)EBO
Vdc
6.0 —
5.0 —
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1
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Pages | Pages 8 | ||
Télécharger | [ 2N6519 ] |
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