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Numéro de référence | 2N6519 | ||
Description | NPN SILICON PLANAR EPITAXIAL TRANSISTORS | ||
Fabricant | CDIL | ||
Logo | |||
1 Page
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N6515, 2N6519
2N6516, 2N6520
2N6517
TO-92
Plastic Package
HIGH VOLTAGE TRANSISTORS
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
2N6515 2N6516 2N6517
2N6519 2N6520
Collector Emitter Voltage
VCEO
250 300 350
Collector Base Voltage
VCBO
250 300 350
Emitter Base Voltage
VEBO
NPN-------------------6------------------
PNP-------------------5------------------
Collector Current Continuous
IC
500
Base Current (Continuous)
IB
250
Total Power Dissipation @ Ta=25ºC PD
625
Derate Above 25ºC
5.0
Operating And Storage Junction
Tstg
-55 to +150
Temperature Range
THERMAL RESISTANCE
Junction to ambient
Junction to case
Rth(j-a)
Rth(j-c)
200
83.3
UNIT
V
V
V
V
mA
mA
mW
mW/ºC
ºC
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Breakdown Voltage BVCEO* IC=1mA,IB=0
2N6515
2N6516, 6519
2N6517, 6520
MIN MAX
250
300
350
UNIT
V
V
V
Collector Base Breakdown Voltage
2N6515
2N6516, 6519
2N6517, 6520
BVCBO
IC=100µA,IE=0
Emitter Base Breakdown Voltage
BVEBO IE=10µA, IC=0
NPN
PNP
250
300
350
6
5
V
V
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 5
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Pages | Pages 5 | ||
Télécharger | [ 2N6519 ] |
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