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Numéro de référence | BC184A | ||
Description | NPN SILICON PLANAR EPITAXIAL TRANSISTORS | ||
Fabricant | CDIL | ||
Logo | |||
1 Page
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CB E
BC182, A, B
BC183, A, B, C
BC184, B, C
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Collector Current Continuous
IC
Power Dissipation at Ta=25ºC
PD
Derate Above 25ºC
Power Dissipation at Tc=25ºC
PD
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
Tj, Tstg
BC182
50
60
BC183
30
45
6.0
100
350
2.8
1.0
8.0
- 55 to +150
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
Rth (j-c)
Rth (j-a)
125
357
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
VCEO
IC=2mA, IB=0
BC182
Collector Base Voltage
VCBO
BC183/BC184
IC=10µA, IE=0
BC182
Emitter Base Voltage
VEBO
BC183/BC184
IE=100µA, IC=0
Collector Cut Off Current
ICBO VCB=50V, IE=0 BC182
Emitter Cut Off Current
VCB=30V, IE=0 BC183/184
IEBO
VEB=4V, IC=0
MIN
50
30
60
45
6.0
BC182_184Rev_1 201205E
BC184
30
45
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
TYP MAX UNITS
V
V
V
V
V
15 nA
15 nA
15 nA
Continental Device India Limited
Data Sheet
Page 1 of 5
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Pages | Pages 5 | ||
Télécharger | [ BC184A ] |
No | Description détaillée | Fabricant |
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