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Número de pieza | J308 | |
Descripción | N-Channel JFETs | |
Fabricantes | Vishay | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de J308 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! J/SST/U308 Series
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
J308
J309
J310
SST308
SST309
SST310
U309
U310
VGS(off) (V)
−1 to −6.5
−1 to −4
−2 to −6.5
−1 to −6.5
−1 to −4
−2 to −6.5
−1 to −4
−2.5 to −6
J308
J309
J310
SST308
SST309
SST310
U309
U310
V(BR)GSS Min (V)
−25
−25
−25
−25
−25
−25
−25
−25
gfs Min (mS)
8
10
8
8
10
8
10
10
IDSS Min (mA)
12
12
24
12
12
24
12
24
FEATURES
D Excellent High Frequency Gain:
Gps 11.5 dB @ 450 MHz
D Very Low Noise: 2.7 dB @ 450 MHz
D Very Low Distortion
D High ac/dc Switch Off-Isolation
BENEFITS
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
APPLICATIONS
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
DESCRIPTION
The J/SST/U308 series offers superb amplification characteristics.
Of special interest is its high-frequency performance. Even at 450
MHz, this series offers high power gain at low noise.
Low-cost J series TO-226AA (TO-92) packaging supports
automated assembly with tape-and-reel options. The SST series
TO-236 (SOT-23) package provides surface-mount capabilities
and is available with tape-and-reel options. The U series
hermetically-sealed TO-206AC (TO-52) package supports full
military processing. (See Military and Packaging Information for
further details.)
For similar dual products packaged in the TO-78, see the
U430/431 data sheet.
TO-226AA
(TO-92)
D1
S2
G3
Top View
J308
J309
J310
TO-236
(SOT-23)
D1
S2
3G
Top View
SST308 (Z8)*
SST309 (Z9)*
SST310 (Z0)*
*Marking Code for TO-236
For applications information see AN104.
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
TO-206AC
(TO-52)
S
1
2
D
3
Top View
U309
U310
G and Case
www.vishay.com
1
1 page J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
20
VGS(off) = −1.5 V
VGS = 0 V
16 −0.2 V
Output Characteristics
50
VGS(off) = −3 V
VGS = 0 V
40
−0.4 V
12 30
−0.4 V
−0.8 V
8
4
0
0
−0.6 V
−0.8 V
−1.0 V
2 46 8
VDS − Drain-Source Voltage (V)
10
20
10
0
0
−1.2 V
−1.6 V
−2.0 V
−2.4 V
2 46 8
VDS − Drain-Source Voltage (V)
10
Transfer Characteristics
30
VGS(off) = −1.5 V
VDS = 10 V
24
Transfer Characteristics
100
VGS(off) = −3 V
VDS = 10 V
80
18 TA = −55_C
25_C
12
60 TA = −55_C
25_C
40
6 125_C
20 125_C
0
0
−0.4
−0.8
−1.2
−1.6
−2
VGS − Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
30
VGS(off) = −1.5 V
VDS = 10 V
f = 1 kHz
24 TA = −55_C
25_C
18
125_C
12
6
0
0
−0.6
−1.2
−1.8
−2.4
VGS − Gate-Source Voltage (V)
−3
Transconductance vs. Gate-Source Voltage
50
VGS(off) = −3 V
VDS = 10 V
f = 1 kHz
40
TA = −55_C
30
25_C
20
125_C
10
0
0
−0.4
−0.8
−1.2
−1.6
VGS − Gate-Source Voltage (V)
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
−2
0
0
−0.6
−1.2
−1.8
−2.4
−3
VGS − Gate-Source Voltage (V)
www.vishay.com
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet J308.PDF ] |
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