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3N128 fiches techniques PDF

Motorola Semiconductors - MOSFET AMPLIFIER

Numéro de référence 3N128
Description MOSFET AMPLIFIER
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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3N128 fiche technique
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Drain Current
@Total Device Dissipation T/^ = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
vDs
vDg
vgs
id
Pd
Tj, Tstg
Value
+ 20
+ 20
±10
50
330
2.2
-65 to +175
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
3N128
CASE 20-03, STYLE 7
TO-72 (TO-206AF)
MOSFET
AMPLIFIER
N-CHANNEL DEPLETION
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Gate-Source Breakdown Voltaged)
(Iq = -10/nAdc, V DS = 0)
Gate Reverse Current
(VGS = -8.0Vdc,VDS = 0)
(Vqs = "8.0 Vdc, VDS = 0, TA = 125°C)
Gate Source Cutoff Voltage
(Vqs = 15 Vdc, Id = 50 ,uAdc)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current(2)
<VDS = 15 Vdc, VGS = 0)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(Vqs = 15 Vdc, Iq = 5.0 mAdc* f =, 1.0 kHz)
Input Admittance
(VdS = 15 Vdc, Id = 5.0 mAdc, f = 200 MHz)
Output Conductance
(VDS = 15 Vdc, Dl = 5.0 mAdc, f = 200 MHz)
Forward Transconductance
(Vds = 15 Vdc, Id = 5.0 mAdc, f = 200 MHz)
Input Capacitance
(Vds = 15 Vdc, Id = 5.0 mAdc, f =1.0 MHz)
Reverse Transfer Capacitance
(Vds = 15 Vdc, Id = 5.0 mAdc, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure
(Vds = 15 Vdc, Id = 5.0 mAdc, f = 200 MHz)
Power Gain
(Vds = 15 Vdc, Dl = 5.0 mAdc, f = 200 MHz)
(1) Caution Destructive Test, can damage gate oxide beyond operation.
(2) Pulse Test: Pulse Width = 300 us, Duty Cycle = 2.0%.
Symbol
V (BR)GSS
'GSS
v GS(off)
-50
-
-0.5
Max
-
0.05
5.0
-8.0
DUnit
Vdc
nAdc
Vdc
'DSS
5.0
25 mAdc
lYfsl
Re(yis)
Re(yos)
Re(yfs )
Cjss
C rss
NF
PG
5000
5000
0.05
13.5
12,000
800
500
7.0
0.35
/imhos
/umhos
/amhos
/AFTlhOS
PF
PF
5.0 dB
23 dB
6-73

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