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ON Semiconductor - High Voltage Transistor

Numéro de référence BF493S
Description High Voltage Transistor
Fabricant ON Semiconductor 
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BF493S fiche technique
BF493S
High Voltage Transistor
PNP Silicon
Features
This is a Pb−Free Device*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above = 25°C
Symbol
VCEO
VCBO
VEBO
IC
PD
Value
−350
−350
−6.0
−500
625
5.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
123
STRAIGHT LEAD
BULK PACK
TO−92
CASE 29
STYLE 1
MARKING DIAGRAM
BF
493S
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 4
1
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BF493SG
Package
TO−92
(Pb−Free)
Shipping
5000 Units / Bulk
Publication Order Number:
BF493S/D

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