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PDF PZT2222AT1 Data sheet ( Hoja de datos )
| Número de pieza | PZT2222AT1 | |
| Descripción | NPN Silicon Planar Epitaxial Transistor | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon Planar
Epitaxial Transistor
This NPN Silicon Epitaxial transistor is designed for use in linear and switching
applications. The device is housed in the SOT-223 package which is designed for
medium power surface mount applications.
• PNP Complement is PZT2907AT1
• The SOT-223 package can be soldered using wave or reflow.
• SOT-223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering, eliminating the possibility of
damage to the die.
COLLECTOR
• Available in 12 mm tape and reel
2, 4
Use PZT2222AT1 to order the 7 inch/1000 unit reel.
Use PZT2222AT3 to order the 13 inch/4000 unit reel.
BASE
1
3
EMITTER
PZT2222AT1
Motorola Preferred Device
SOT-223 PACKAGE
NPN SILICON
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (Open Collector)
Collector Current
Total Power Dissipation up to TA = 25°C(1)
Storage Temperature Range°
Junction Temperature°
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
40
75
6.0
600
1.5
– 65 to +150
150
Vdc
Vdc
Vdc
mAdc
Watts
°C
°C
Thermal Resistance from Junction to Ambient
Lead Temperature for Soldering, 0.0625″ from case
Time in Solder Bath
RθJA 83.3 °C/W
TL 260 °C
10 Sec
DEVICE MARKING
P1F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
V(BR)CEO
40
— Vdc
Collector-Base Breakdown Voltage (IC = 10 µAdc, IE = 0)
V(BR)CBO
°75°
°—°
Vdc
Emitter-Base Breakdown Voltage (IE = 10 µAdc, IC = 0)
V(BR)EBO
6.0
—
Vdc
Base-Emitter Cutoff Current (VCE = 60 Vdc, VBE = – 3.0 Vdc)
IBEX
—
20 nAdc
Collector-Emitter Cutoff Current (VCE = 60 Vdc, VBE = – 3.0 Vdc)
ICEX
—
10 nAdc
Emitter-Base Cutoff Current (VEB = 3.0 Vdc, IC = 0)
IEBO
—
100 nAdc
1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x 0.059 inches; mounting pad for the collector lead min. 0.93 inches2.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
2–802
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1 page | ||
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| PDF Descargar | [ Datasheet PZT2222AT1.PDF ] | |
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