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PDF 3N209 Data sheet ( Hoja de datos )
| Número de pieza | 3N209 | |
| Descripción | DUAL-GATE MOSFET | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 3N209 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
Drain Current
Gate Current
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Lead Temperature, 1/16" From Seated
Surface for 10 seconds
Storage Channel Temperature Range
Operating Channel Temperature
Symbol
vDs
V DG1
VDG2
id
'G1R
'G1F
<G2R
'G2F
PD
Pd
tl
Value
25
30
30
30
-10
10
-10
10
3N209 MPF209
Unit
Vdc
Vdc
mAdc
mAdc
300 - mW
1.71 mW/°C
300 mW
2.4 mW/°C
260 200 °C
Tstg
Tchannel
-65 to
+ 175
175
-65 to
+ 150
150
°C
°C
3N209
MPF209
3N209
CASE 20-03, STYLE 9
TO-72 (TO-206AF)
MPF209
CASE 317-01, STYLE 1
DUAL-GATE
MOSFET
UHF COMMUNICATIONS
—N-CHANNEL DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
OFF CHARACTERISTICS
Characteristic
Drain-Source Breakdown Voltage
(ID = lO^tAdc, Vqis = -4.0Vdc, VQ2S = 4.0 Vdc)
—Gate 1 Source Forward Breakdown Voltage
(Id = 10 mAdc, VG2s = VDS = 0)
—Gate 1 Source Reverse Breakdown Voltage
dGI = -10 mAdc, VG2s = VDS = 0)
—Gate 2 Source Forward Breakdown Voltage
dG2 = 10 mAdc, VG1S = VdS = 0)
—Gate 2 SoOrce Reverse Breakdown Voltage
0G2 = -10 mAdc, Vgis = VDS = 0)
—Gate 1 Terminal Forward Current
(Vgis = 6.0 vdc, vG2s = vds = o*
—Gate 1 Terminal Reverse Current
(VG1S = -6.0Vdc,VG2S = Vds - 0)
<VG1S = -6.0 Vdc, VG2S = Vds = 0, TA = 150°C)
—Gate 2 Terminal Forward Current
"
(VG2S ^ 6.0 vdc, vG1s = Vds = oi
—Gate 2 Terminal Reverse Current '
(VG2S = - 6.0 Vdc, Vq 1 S = Vds = 0)
(VG2S = -6.0 Vdc, VQ1S = VDS = 0, TA = 150°C)
ON CHARACTERISTICS
—Gate 1 Zero Voltage Drain Current
(VpS = 15 Vdc, Vqis = 0. VG2S = 4.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
<Vds = 15 Vdc, VQ2S = 4.0 Vdc, Id = 10 mAdc, f = 1.0 kHz)
Input Capacitance
(Vds = 15 Vdc, VQ2S = 4.0 Vdc, Id * 5.0 mAdc, f = 1.0 MHz)
Reverse Transfer Capacitance
(Vds = 15 Vdc, VQ2S = 4.0 Vdc, Id 3= 5.0 mAdc, f = 1.0 MHz)
Output Capacitance
(Vds = 15 Vdc, VQ2S = 4.0 Vdc, Id * 5.0 mAdc, f = 1.0 MHz)
Symbol
Min
V (BR)DSX
25
V(BR)G1SSF
7.0
V(BR)G1SSR -7.0
V(BR)G2SSF
7.0
V(BR)G2SSR
'G1SSF
-7.0
-
!G1SSR
!G2SSF
-
—
'G2SSR
-
>DSS
Vfs
Cj ss
Crss
Cqss
10
—
0.005
0.5
Typ
-
-
-
-
-
-
-
-
-
13
3.3
0.023
2.0
Max
-
22
-22
22
-22
20
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
nAdc
-20 nAdc
-10 pAdc
20 nAdc
-20
"•
-10
nAdc
fiAdc
mAdc
20
7.0
0.03
4.0
mmhos
pF
PF
PF
6-89
1 page  
3N209, MPF209
FIGURE 12 - TEST CIRCUIT FOR POWER GAIN, NOISE FIGURE
AND THIRD ORDER INTERMODULATION DISTORTION
Output
C1 .0-20 pF, JOHANSON Air Variable Cap. (14.5 pF Nominal)
C2 - 1 0-10 pF, JOHANSON Air Variable Cap (5.4 pF Nominal)
C3, CI 1 - 470 pF, Low Inductance Feed thru Cap.
C4,
C8
,
C9,
C10-
250
pF,
Low
Inductance,
UNDERWOOD
Cap.
(J-101)
C5 = 4-6.0 pF. JOHANSON Air Variable Cap. (0.92 pF Nominal)
C6- 1 .0-10 pF, JOHANSON Air Variable Cap. (5.9 pF Nominal)
C7- 1 .0-10 pF, JOHANSON Air Variable Cep (3.0 pF Nominal)
LI -2 .52 x 0.1 inches \
®
L2-0 4 x 0.1 inches
)
>
°O"n
2
*siidded
gl"*
T,,,on
-
*
oz
-
=°PP»r
clad,
1/16'
L3- 1 23 x 0.2 inches
) Trademark of E.I. Dupont, DeNemours and Co., Inc.
6-93
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 3N209.PDF ] | |
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