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Motorola Semiconductors - AM/FM TRANSISTORS

Numéro de référence BF255
Description AM/FM TRANSISTORS
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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BF255 fiche technique
BF254
BF255
CASE 29-02, STYLE 21
TO-92 (TO-226AA)
AM/FM TRANSISTORS
NPIM SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation @Ta = 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
Pd
Tj, T st g
Symbol
Rejc
Rfljc
Value
20
30
5.0
100
350
2.8
1.0
8.0
-55 to +150
Max
125
357
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
(IC = 10 uAdc, Ie = 0)
V(BR)CE0
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 uAdc, Ic = 0)
V(BR)EB0
Collector Cutoff Current
(Vcb = 10 Vdc, Ie = 0)
ICBO
Emitter Cutoff Current
(V E B = 3.0 Vdc, Ic = 0)
ON CHARACTERISTICS
lEBO
DC Current Gain
dC = 1-0 mA, VcE = 10 Vdc)
Base-Emitter On Voltage
(IC = 1 mAdc, VcE = 1 Vdc)
SMALL-SIGNAL CHARACTERISTICS
BF254
BF254-3
BF254-4
BF255
BF255-2
BF255-3
BF254
BF255
hFE
VBE(on)
Current Gain-Bandwidth Product
(IC = 1 -0 mAdc, VcE = 1 Vdc, f = 1 00 MHz)
BF254
BF255
Common Emitter Feedback Capacitance
(Vcb = 1 Vdc, Ie = 0, f = 1 .0 MHz)
Noise Figure
dC = 1 mAdc, Vce = 1 Vdc, f = 1 MHz, Rs = 50 ohms)
n
Cre
Nf
Min.
20
30
5.0
65
65
100
35
35
65
Typ.
.68
260
200
0.90
1.7
100
100
220
125
220
125
75
125
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
Vdc
MHz
pF
dB
2-156

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