|
|
PDF BF509 Data sheet ( Hoja de datos )
| Número de pieza | BF509 | |
| Descripción | VHF TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BF509 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
BF509
CASE 29-02, STYLE 17
TO-92 (TO-226AA)
VHF TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
Value
VCEO
35
VCBO
.
VEBO
40
4.0
ic 50
PD 350
2.8
pd
Tj, T stg
1.0
8.0
-55 to +150
Symbol
Rwc
RflJC
Max
125
357
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, Ib = 0)
V(BR)CEO
Collector-Base Breakdown Voltage
(IC = 100 LiAdc, Ie = 0)
V(BR)CB0
Emitter-Base Breakdown Voltage
(IE = 100 uAdc, Ic = 0)
V(BR)EB0
Collector Cutoff Current
(V C B = 20 V, El = 0)
ON CHARACTERISTICS
ICBO
DC Current Gain
dC = 3 mAdc, Vce = 1 Vdc)
SMALL SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
dC = 3 mAdc, Vce = 10 Vdc, f = 100 MHz)
hFE
fT
Feedback Capacitance
(VCB = 1 Vdc, Ie = 0, f = 1 .0 MHz)
Crb
Collector-Base Capacitance
(VCB = 1 V, Ie = 0, f = 1 .0 MHz)
CCBO(Cre)
Noise Figure
dC = 3 mAdc, Vce = 1 0.8 V, Rs = 50 Ohms, f = 200 MHz)
Common-Base Amplifier Power Gain
dC = 3 mAdc, Vce = 1 0.8 V, R[_ = 1 KQ, f = 200 MHz)
Forward AGC Current
dc(Agc) (Gain Reduction = 30 dB, Rs = 50 Ohms,
Vce = 10.8 V,f = 200 MHz)
NF
Gpb
IC(Agc)
Min.
35
40
4
—
20
600
_
15
7
Typ.
—
—
—
—
850
0.15
0.6
22
Max.
_
100
—
0.25
0.9
2.5
8.8
200 MHz POWER GAIN NOISE FIGURE TEST CIRCUIT
"1 15n
ft-MI
nsr*
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
Unit
Vdc
Vdc
Vdc
nAdc
MHz
pF
pF
dB
dB
mAdc
OK
I.Sto
Spf
10t<5
40p(
—i ikr,
S0*» IRacMw
—,„,T
—^hs -* ^-
• Leadiess ceramic
LI - 3 turns On
L2 - 2 turns i rnn
2-172
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BF509.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BF502 | NPN SILICON RF TRANSISTOR |  Siemens Semiconductor Group |
| BF5020 | Silicon N-Channel MOSFET Tetrode |  Infineon |
| BF5020R | Silicon N-Channel MOSFET Tetrode | Infineon |
| BF5020W | Silicon N-Channel MOSFET Tetrode | Infineon |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |