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Taiwan Semiconductor - 6.0 AMPS Silicon Rectifiers

Numéro de référence P600D
Description 6.0 AMPS Silicon Rectifiers
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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P600D fiche technique
P600A - P600M
6.0 AMPS Silicon Rectifiers
P-600
Features
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, lead free. solderable
per MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
260oC/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Weight: 0.07 ounce, 2.1 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol P600A P600B P600D P600G P600J P600K P600M Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM
VRMS
VDC
50
35
50
100 200 400 600 800 1000
70 140 280 420 560 700
100 200 400 600 800 1000
V
V
V
Maximum Average Forward Rectified Current at
TA=60oC, 0.375”(9.5mm) Lead Length (Fig 1)
TL=60, 0.125”(3.1mm) Lead Length (Fig 2)
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method )
I(AV)
IFSM
6.0
5.0
400
A
A
Maximum Instantaneous Forward Voltage @6.0A
@100A
VF
1.0
1.3
1.4 V
Maximum DC Reverse Current @ TA=25
at Rated DC Blocking Voltage @ TA=125
Typical Junction Capacitance ( Note 1 )
IR
Cj
5.0 uA
1.0 mA
110 pF
Typical Thermal Resistance (Note 2)
RθJA
RθJL
35
5.0
oC/W
Operating Junction and Storage Temperature
Range
TJ, TSTG
-50 to + 150
Notes:
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
2. Mount on Cu-Pad Size 16mm x 16mm on P.C.B.
oC
Version: A06

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