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Numéro de référence | BCX18 | ||
Description | SILICON PLANAR EPITAXIAL TRANSISTORS | ||
Fabricant | CDIL | ||
Logo | |||
1 Page
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCX17
BCX18
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistors
Marking
BCX17 = T1
BCX18 = T2
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (VBE = 0)
Collector–emitter voltage (open base)
Collector current (peak value)
Total power dissipation up to Tamb = 25 °C
Junction temperature
D.C. current gain
–IC = 100 mA; –VCE = 1 V
Transition frequency
–IC = 10 mA; –VCE = 5 V; f = 35 MHz
–VCES
–VCE0
–ICM
Ptot
Tj
BCX17
max. 50
max. 45
max.
max.
max.
BCX18
30 V
25 V
1000
mA
250 mW
150 ° C
hFE 100 to 600
fT typ.
100 MHz
Continental Device India Limited
Data Sheet
Page 1 of 4
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Pages | Pages 4 | ||
Télécharger | [ BCX18 ] |
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