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Motorola Semiconductors - GENERAL PURPOSE TRANSISTOR

Numéro de référence BCX53
Description GENERAL PURPOSE TRANSISTOR
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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BCX53 fiche technique
BCX51
BCX52
BCX53
CASE 345-01, STYLE 1
SOT-89
GENERAL PURPOSE TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current Continuous
Operating and Storage Junction
Temperature Range
Symbol
vCEO
VCER
vCBO
vEBO
IB
'C
TJ- Tstg
BCX51 BCX52 BCX53
45 60 80
45 60 100
45 60 100
5.0 5.0 5.0
0.1 0.1 0.1
1.0 1.0 1.0
-55 to +150
Unit
V
V
V
V
A
A
°C
THERMAL CHARACTERISTICS
Characteristic
*Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol
PD
Storage Temperature
Tstg
•Thermal Resistance Junction to Ambient
R0JA
mm•Package mounted on 99.5% alumina 10 x 12 x 0.6
Max
1.0
8.0
150
125
Unit
Watt
mW/°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
dC = 10 mA)
dC = 10 mA)
(IC = 10 mA)
Collector-Base Breakdown Voltage
dC = 10^)
dC = 10 nA)
dC = 10 /xA)
Emitter-Base Breakdown Voltage
dE = 10/iA)
BCX51
BCX52
BCX53
BCX51
BCX52
BCX53
Collector Cutoff Current
(VCB = 30 V)
(VCB = 30 V, Tj = 125°C)
Emitter Cutoff Current
(VEB = 3.0 V)
ON CHARACTERISTICS
DC Current Gain
dC = 5.0 mA, Vce = 2.0 V)
dC = 150 mA, Vqe = 2.0 V)
dC = 150 mA, Vqe = 2.0 V)
dC = 500 mA, Vce = 2.0 V)
Collector-Emitter Saturation Voltage
dC = 500 mA, Bl = 50 mA)
Base-Emitter On Voltage
dC = 500 mA, Vce = 2.0 V)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(VCE = 5.0 V, Cl = 10 mA, f = 35 MHz)
BCX51
BCX52,53
Symbol
v (BR)CEO
v (BR)CBO
v (BR)EBO
'CBO
'EBO
hFE
v CE(sat)
v BE(on)
Min
45
60
80
45
60
100
5.0
25
40
40
25
Max
Unit
|
100 nA
10 ^A
100 nA
250
160
0.5
1.0
MHz
3-22

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