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BA779-G fiches techniques PDF

Vishay - RF PIN Diodes

Numéro de référence BA779-G
Description RF PIN Diodes
Fabricant Vishay 
Logo Vishay 





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BA779-G fiche technique
www.vishay.com
1
BA779-G
Vishay Semiconductors
RF PIN Diodes
3
2
FEATURES
• Wide frequency range 10 MHz to 1 GHz
• AEC-Q101 qualified
• Base P/N-HG3 - green, automotive grade
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Current controlled HF resistance in adjustable
attenuators
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.1 mg
Packaging codes/options:
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BA779-G
ORDERING CODE
BA779-HG3-08
TYPE MARKING
PH1
INTERNAL
CONSTRUCTION
Single diode
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PART
TEST CONDITION
SYMBOL
VALUE
Reverse voltage
Forward continuous current
VR 30
IF 50
UNIT
V
mA
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air
on PC board
50 mm x 50 mm x 1.6 mm
RthJA
Junction temperature
Storage temperature range
Operating temperature range
Tj
Tstg
Top
VALUE
500
125
- 55 to + 150
- 55 to + 125
UNIT
K/W
°C
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
Forward voltage
IF = 20 mA
VF
Reverse current
VR = 30 V
IR
Diode capacitance
f = 100 MHz, VR = 0 V
CD
Differential forward resistance
f = 100 MHz, IF = 1.5 mA
rf
Reverse impedance
f = 100 MHz, VR = 0 V
BA779-G zr 5
Minority carrier lifetime
IF = 10 mA, IR = 10 mA
TYP.
4
MAX.
1
0.05
0.5
50
UNIT
V
μA
pF
k
μs
Rev. 1.2, 25-Feb-13
1 Document Number: 83321
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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