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Galaxy Microelectronics - Silicon Bridge Rectifiers

Numéro de référence KBJ25B
Description Silicon Bridge Rectifiers
Fabricant Galaxy Microelectronics 
Logo Galaxy Microelectronics 





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KBJ25B fiche technique
Production specification
Silicon Bridge Rectifiers
KBJ25A--KBJ25M
FEATURES
Rating to 1000V PRV
Surge overload rating to 200 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
Pb
Lead-free
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
MECHANCAL DATA
Polarity: Symbols molded on body
Weight: 0.23 ounces,6.6 grams
Mounting position: Any
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic
Symbol KBJ25A KBJ25B KBJ25D KBJ25G KBJ25J KBJ25K KBJ25M UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward Output current
@TA=25
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
VRRM
VRMS
VDC
IF(AV)
IFSM
50
35
50
100 200 400 600 800 1000
70 140 280 420 560 700
100 200 400 600 800 1000
25.0
200.0
V
V
V
A
A
Thermal Characteristics
Characteristic
Symbol KBJ25A KBJ25B KBJ25D KBJ25G KBJ25J KBJ25K KBJ25M UNITS
Typical junction capacitance per element
Typical thermal resistance
Operating junction temperature range
Storage temperature range
CJ
RθJC
TJ
TSTG
85
0.6
- 55 ---- + 150
- 55 ---- + 150
pF
/W
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Symbol KBJ25A KBJ25B KBJ25D KBJ25G KBJ25J KBJ25K KBJ25M UNITS
Maximum instantaneous forward voltage
@12.5A
Maximum reverse current @TA=25
at rated DC blocking voltage @TA=100
VF
IR
1.1 V
10.0 μ A
1.0 mA
Document Number: KJ6803AA
www.gmicroelec.com
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