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PDF 2N3867 Data sheet ( Hoja de datos )
| Número de pieza | 2N3867 | |
| Descripción | SILICON PNP TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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2N3867
SILICON
PNP TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3867 is a silicon
PNP power transistor designed for high speed switching
and amplifier applications.
MARKING: FULL PART NUMBER
TO-5 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
VCBO
VCEO
VEBO
IC
ICM
IB
PD
PD
TJ, Tstg
JC
JA
40
40
4.0
3.0
10
0.5
6.0
1.0
-65 to +200
29
175
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
ICEX
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
fT
Cob
Cib
VCB=40V, TC=150°C
VCE=40V, VBE=2.0V
IC=20mA
IE=100μA
IC=500mA, IB=50mA
IC=1.5A, IB=150mA
IC=2.5A, IB=250mA
IC=500mA, IB=50mA
IC=1.5A, IB=150mA
IC=2.5A, IB=250mA
VCE=1.0V, IC=500mA
VCE=2.0V, IC=1.5A
VCE=3.0V, IC=2.5A
VCE=5.0V, IC=3.0A
VCE=5.0V, IC=100mA, f=20MHz
VCB=10V, IE=0, f=100kHz
VEB=3.0V, IC=0, f=100kHz
40
4.0
0.9
50
40
25
20
60
td VCC=30V, VBE(off)=0
tr IC=1.5A, IB1=150mA
ts VCC=30V, IC=1.5A
tf IB1=IB2=150mA
MAX
150
1.0
0.5
0.75
1.3
1.0
1.4
2.0
200
120
1000
35
65
325
75
UNITS
V
V
V
A
A
A
W
W
°C
°C/W
°C/W
UNITS
μA
μA
V
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
ns
ns
R0 (8-May 2013)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N3867.PDF ] | |
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