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PDF MBR320 Data sheet ( Hoja de datos )
| Número de pieza | MBR320 | |
| Descripción | Schottky Barrier Rectifier ( Diode ) | |
| Fabricantes | Kexin | |
| Logotipo |  |
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DIP Type
Schottky Barrier Rectifier
MBR320 ~ MBR3100
TransDisiotodress
Ƶ Features
ƽ Metal silicon junction, majority carrier conduction
ƽ Low power loss, high efficiency
ƽ High forward surge current capability
DO-201AD
0.210 (5.3)
0.190 (4.8)
DIA.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
Ƶ Absolute Maximum Ratings and Electrical Characteristics
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%.
Parameter
Symbol
MBR
320
MBR
330
MBR
340
MBR
350
MBR
360
MBR
370
MBR
380
MBR
390
MBR
3100
Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC Blocking Voltage
VRRM
VRMS
VDC
20 30 40 50 60 70 80 90 100
14 21 28 35 42 49 56 63 70
20 30 40 50 60 70 80 90 100
V
Maximum average forward rectified current
0.375”(9.5mm) lead length(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
I(AV)
IFSM
3.0
80.0
A
Maximum instantaneous forward voltage at 3.0A VF
0.55
0.70
0.85 V
Maximum DC reverse current
at rated DC blocking voltage
TA=25ć
TA=100ć
IR
20
0.5
10
mA
Typical junction capacitance (Note 1)
Cj 250
160
Typical thermal resistance (Note 2)
RthJA
40
Junction Temperature
Tj -65 to +125
-65 to +150
Storage Temperature
Tstg -65 to +150
Notes:
1. Measured at 1MHz and applied reverse voltage of 4V D.C
2. Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
pF
ć/W
ć
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| PDF Descargar | [ Datasheet MBR320.PDF ] | |
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