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MBR760 fiches techniques PDF

EIC - SCHOTTKY BARRIER RECTIFIER DIODES

Numéro de référence MBR760
Description SCHOTTKY BARRIER RECTIFIER DIODES
Fabricant EIC 
Logo EIC 





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MBR760 fiche technique
MBR735 ~ MBR760
PRV : 35~60 Volts
Io : 7.5 Amperes
FEATURES :
* Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
* Metal silicon junction, majority carrier conduction
* Low power loss, high efficiency
* Guardring for overvoltage protection
* For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
* High temperature soldering : 250°C/10 seconds,
0.25" (6.35mm) from case
* Pb / RoHS Free
MECHANICAL DATA :
* Case : JEDEC TO-220AC molded plastic body
* Terminals: Plated leads, solderable per
MIL-STD-750 Method 2026
* Polarity: As marked
* Mounting Position: Any
* Weight : 2.24 grams (Approximately)
Certificate TH97/10561QM
Certificate TW00/17276EM
SCHOTTKY BARRIER
RECTIFIER DIODES
TO-220AC
0.154(3.91)DIA.
0.148(3.74)
0.415(10.54)MAX.
0.055(1.39)
0.113(2.87)
0.045(1.14)
0.103(2.62)
0.145(3.68)
0.135(3.43)
0.635(16.13)
0.625(15.87)
12
0.350(8.89)
0.330(8.39)
0.160(4.06)
PIN 1
0.140(3.56)
PIN 2
CASE
0.205(520)
0.195(4.95)
0.037(0.94)
0.027(0.68)
0.185(4.70)
0.175(4.44)
0.603(15.32)
0.573(14.55)
0.560(14.22)
0.530(13.46)
0.022(0.56)
0.014(0.36)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ( Tc = 25 °C unless otherwise noted)
RATINGS
Maximum Reptitive Peak Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current (See Fig. 1)
Peak Forward Surg Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage (Note 1)
at IF = 7.5 A, TC = 25 °C
at IF = 7.5 A, TC = 125 °C
Maximum Reverse Current at Rate
Peak Reverse Voltage
T C = 25 °C
T C = 125 °C
Typical Thermal Resistance
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL MBR735 MBR745 MBR750 MBR760 UNIT
VRRM
35
45
50
60
V
VRWM
35
45
50
60
V
VDC 35 45 50 60 V
IF(AV) 7.5 A
IFSM 150 A
VF
IR
IR(H)
RθJC
TJ
TSTG
- 0.75
0.57 0.65
0.1 0.5
15 50
3.0
-65 to + 150
-65 to + 175
V
mA
°C/W
°C
°C
Note :
(1) Pulse test : 300 µs pluse width, 1% duty cycle
Page 1 of 2
Rev. 01 : February 22, 2006

PagesPages 2
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