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PDF MBR30150PT Data sheet ( Hoja de datos )
| Número de pieza | MBR30150PT | |
| Descripción | 30.0 Ampere Dual Common Cathode Schottky Barrier Rectifiers | |
| Fabricantes | Thinki Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MBR30150PT (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MBR3035PT thru MBR30200PT
®
Pb Free Plating Product
MBR3035PT thru MBR30200PT
Pb
30.0 Ampere Dual Common Cathode Schottky Barrier Rectifiers
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvoltage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: TO-247AD/TO-3P molded plastic
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.2245 ounces, 6.3673 grams.
0.640(16.25)
0.620(15.75)
0.142(3.60)
0.125(3.20)
0.087(2.20)
0.070(1.80)
0.126(3.20)
0.110(2.80)
0.050(1.25)
0.045(1.15)
0.225(5.70)
0.204(5.20)
0.225(5.70)
0.204(5.20)
0.199(5.05)
0.175(4.45)
0.095(2.40)
0.030(0.75)
0.017(0.45)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
MBR MBR MBR MBR MBR MBR MBR MBR
PARAMETER
SYMBOL 3035 3045 3050 3060 3090 30100 30150 30200
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
VRRM
VRMS
VDC
IF(AV)
IFRM
PT PT PT PT PT PT PT PT
35 45 50 60 90 100 150 200
24 31 35 42 63 70 105 140
35 45 50 60 90 100 150 200
30
30
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
Peak repetitive reverse surge Current (Note 1)
IRRM
2
1
Maximum instantaneous forward voltage (Note 2)
IF=15A, TJ=25℃
IF=15A, TJ=125℃
IF=30A, TJ=25℃
IF=30A, TJ=125℃
-
0.75
0.85
0.95 1.05
VF 0.60 0.65 0.75 0.92 -
0.82 -
- 1.02 1.10
0.73 -
- 0.98 -
Maximum reverse current @ rated VR TJ=25 ℃
TJ=125 ℃
1
IR 20
15
0.5
10
0.1
Voltage rate of change,(Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: 2.0μs Pulse Width, f=1.0KHz
dV/dt
RθJC
TJ
TSTG
10,000
1.4
- 55 to +150
- 55 to +150
Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle
UNIT
V
V
V
A
A
A
A
V
mA
V/μs
OC/W
OC
OC
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBR30150PT.PDF ] | |
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