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PDF BFR93S Data sheet ( Hoja de datos )
| Número de pieza | BFR93S | |
| Descripción | RF TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
VCEO
VCBO
v EBO
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
*Totai Device Dissipation, T/\ = 25°C
Derate above 25°C
PD
Storage Temperature
Tstg
'Thermal Resistance Junction to Ambient
RftJA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value
12
15
2.0
25
Max
350
2.8
150
357
Unit
. Vdc
Vdc
Vdc
mAdc
Unit
mW
mwrc
°C
°C/W
BFR93.S
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
RF TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
c(l = 10 mA)
Collector-Base Breakdown Voltage
0C = 10 mA)
Emitter-Base Breakdown Voltage
E(l = 100 *iA)
_____
Collector Cutoff Current
(VCE = 10 V)
Collector Cutoff Current
(VCB = 10 V)
Emitter Cutoff Current
(VEB = 1.0 V)
ON CHARACTERISTICS
DC Current Gain
c(l = 1.0 mA, Vce = 5.0 V)
c(l = 20 mA, Vce = 4.0 V)
dC = 30 mA, Vce = 50 v >
Collector-Emitter Saturation Voltage
c(l = 35 mA, Ib = 7.0 mA)
Base-Emitter Saturation Voltage
c(l = 35 mA. Ib = 7.0 mA)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
c(l
=
30 mA, Vce
=
v5.0
f
-
=
50 °
MHz)
Noise Figure
(VC e = 5.0 V, Cl
2.0 mA, fts = 50 n, f * 30 MHz)
BFR93S
BFR93S
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEO
ICBO
lEBO
hFE
VCE(sat)
VBE(sat)
NF
Min
12
15
2.0
25
30
25
4.5
Max
50
50
10
100
0.5
3.0
Unit
Vdc
Vdc
Vdc
nA
nA
Vdc
dB
3-35
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BFR93S.PDF ] | |
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