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ROHM Semiconductor - NPN small signal transistor

Numéro de référence BFS17
Description NPN small signal transistor
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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BFS17 fiche technique
Transistors
NPN small signal transistor
BFS17
BFS17
zFeatures
1) Ideal for RF applications.
2) Mixers and oscillations in TV tuners.
3) RF communications equipment.
zPackaging specifications
Type
BFS17
Package
Code
Basic ordering unit (pieces)
Taping
T116
3000
zDimensions (Unit : mm)
BFS17
(1)Emitter
(2)Base
(3)Collector
2.9
0.4
(3)
0.95
0.45
(2) (1)
0.95 0.95
1.9
0.15
Each lead has same dimensions
Abbreviated symbol : GMA
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE
Limits
25
15
2.5
0.05
0.20
0.25
150
55 to 150
Unit
V
V
V
A
W
W
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-emitter breakdown voltage BVCEO 15
V IC= 1mA
Collector-emitter breakdown voltage BVCBO 5 − − V IC= 50µA
Emitter-base breakdown voltage
BVEBO 2.5
V IE= 50µA
Collector-base cutoff current
ICBO
0.1 µA VCB= 10V
DC current transfer ratio
20
hFE
20
150
VCE= 1V, IC= 2mA
−−
VCE= 1V, IC= 25mA
Transition frequency
fT 1000 MHz VCE= 5V, IC= 10mA
Collector output capacitance
Cob
1.5 pF VCB= 10V, f=1MHz
Collector input capacitance
Collector-base cutoff current
Cib
ICBO
2.0 pF VCB= 0.5V, f=1MHz
10 µA VCB= 10V, Ta=100°C
1/1

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