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Numéro de référence | BFS17 | ||
Description | Silicon NPN Planar RF Transistor | ||
Fabricant | TEMIC | ||
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1 Page
Silicon NPN Planar RF Transistor
Applications
For broadband amplifiers up to 1 GHz.
Features
D High power gain
D SMD-package
1
BFS17/BFS17R
1
23
94 9280
BFS17 Marking: E1
Plastic case (SOT 23)
1= Collector; 2= Base; 3= Emitter
Absolute Maximum Ratings
Parameters
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Tamb ≤ 60°C
Storage temperature range
Maximum Thermal Resistance
Parameters
Junction ambient on glass fibre printed board
(25 x 20 x 1.5) mm3 plated with 35 mm Cu
32
95 10527
BFS17R Marking: E4
Plastic case (SOT 23)
1= Collector; 2= Base; 3= Emitter
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
25
15
2.5
25
200
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Symbol
RthJA
Value
450
Unit
K/W
TELEFUNKEN Semiconductors
Rev. A1, 17-Apr-96
1 (5)
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Pages | Pages 5 | ||
Télécharger | [ BFS17 ] |
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