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PDF MFE823 Data sheet ( Hoja de datos )
| Número de pieza | MFE823 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MFE823
CASE 22-03, STYLE 11
TO-18 (TO-206AA)
MOSFET
—P-CHANNEL ENHANCEMENT
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
Drain Current
@Total Device Dissipation Ta = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
vDs
Vdg
id
?d
TJ' Tstg
Value
25
±10
30
300
1.7T '
-65 to +175
Unit
Vdc
Vdc
mAdc
mW
mW/°C
X
Refer to 2N4352 for graphs.
THERMAL CHARACTERISTICS.
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R&JA
.. RaJC
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.!
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
D(l = -10 A^Adc, Vqs = Vdc >
Zero-Gate-Voltage Drain Current
(VDS = -10 Vdc, VG S = 0)
Gate Reverse Current
(VGS = -10 Vdc, Vps
ON CHARACTERISTICS
Gate Threshold Voltage
(V D s = -10 Vdc, lp = -10/uAdc)
On-State Drain Current
(V DS = -10Vdc,VGS
10 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(Vqs = -10 Vdc, lp = -2.0 mAdc, f = 1.0 kHz)
Input Capacitance
(Vps = -1QVdc, Vqs = -10 Vdc, f
1.0 MHz)
Reverse Transfer Capacitance
(Vps = - 10 Vdc, Vqs = - 10 Vdc, f = 1.0 MHz)
Symbol
V(BR)DSX
IDSS
IGSS
Min
VGS(Th)
lD(on)
IVfsi
'Max
584
250
6.0
Unit
°C/W
°C/W
•nUnit
nAdc
pAdc
mAdc
/imhos
PF
PF
6-126
1 page | ||
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| PDF Descargar | [ Datasheet MFE823.PDF ] | |
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