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PDF MFE825 Data sheet ( Hoja de datos )
| Número de pieza | MFE825 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MFE825
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@Total Device Dissipation T"a = 25°C
Derate above 25°C
Junction Temperature Range
Operating and Storage Junction
Temperature Range
Symbol
vDs
Vgs
id
Pd
Tj
TJ- Tstg
Value
20
30
25
200
1.6
150
- 65 to + 1 50
Unit
Vdc
Vdc
mA
mW
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
OFF CHARACTERISTICS
Characteristic
Drain-Source Breakdown Voltage
(ID =1.0 /iA, Vqs = -8.0 V)
Gate Reverse Current
(Vgs = -iov,vDS
V)
Gate Source Voltage
dp = 1.0 mA, VDS = 2.0 V)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(Vps = io v, vG s = o)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VpS = 10 V, VGS = 0, f = 1.0 kHz)
CASE 22-03, STYLE 2
TO-18 (TO-206AA)
MOSFET
—N-CHANNEL DEPLETION
Refer to 2N3796 for graphs.
Symbol
V (BR)DSX
!GSS
vgs
Min
20
>DSS
IVfsl
1.0
500
Max
-2.0
Vdc
PA
Vdc
mA
/xmhos
6-127
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet MFE825.PDF ] | |
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